 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V8512J/FT is available in plastic 36-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. FEATURES * Fast access time (the following are maximum values) TC55V8512J/FT-12:12 ns TC55V8512J/FT-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 170 15 140 20 130 25 110 ns mA * * * * * * Single power supply voltage of 3.3 V 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Package: SOJ36-P-400-1.27 (J) (Weight: 1.35 g typ) TSOP II44-P-400-0.80 (FT) (Weight: 0.45 g typ) Standby:4 mA (both devices) PIN ASSIGNMENT (TOP VIEW) 36 PIN SOJ 44 PIN TSOP PIN NAMES A0 to A18 NC NC A17 A3 A2 A1 A0 CE I/O1 I/O2 VDD GND I/O3 I/O4 WE A16 A15 A14 A13 A18 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC NC A4 A5 A6 A7 OE I/O8 I/O7 GND VDD I/O6 I/O5 A8 A9 A10 A11 A12 NU NC NC I/O1 to I/O8 CE Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power (+3.3 V) Ground No Connection Not Usable (Input) A17 A3 A2 A1 A0 CE I/O1 I/O2 VDD GND I/O3 I/O4 WE A16 A15 A14 A13 A18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A4 A5 A6 A7 OE I/O8 I/O7 GND VDD I/O6 I/O5 A8 A9 A10 A11 A12 NU WE OE VDD GND NC NU (TC55V8512J) (TC55V8512FT) 2001-12-19 1/10 TC55V8512J/FT-12,-15 BLOCK DIAGRAM A0 A1 A4 A8 A9 A12 A14 A15 A16 A17 ROW ADDRESS BUFFER VDD GND ROW DECODER MEMORY CELL ARRAY 512 x 1,024 x 8 (4,194,304) CE I/O1 I/O2 I/O3 I/O4 I/O5 I/O5 I/O7 I/O8 DATA OUTPUT BUFFER CE COLUMN ADDRESS BUFFER CLOCK GENERATOR A2 A3 A5 A6 A7 A10 A11A13 A18 VALUE -0.5 to 4.6 -0.5* to 4.6 -0.5* to VDD + 0.5** 1.4 260 -65 to 150 -10 to 85 DATA INPUT BUFFER SENSE AMP COLUMN DECODER WE OE CE CE MAXIMUM RATINGS SYMBOL VDD VIN VI/O PD Tsolder Tstg Topr Power Supply Voltage Input Terminal Voltage Input/Output Terminal Voltage Power Dissipation Soldering Temperature (10s) Storage Temperature Operating Temperature RATING UNIT V V V W C C C *: -1.5 V with a pulse width of 20% tRC min (4 ns max) **: VDD + 1.5 V with a pulse width of 20% tRC min (4 ns max) DC RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70C) SYMBOL VDD VIH VIL PARAMETER Power Supply Voltage Input High Voltage Input Low Voltage MIN 3.0 2.0 -0.3* TYP 3.3 MAX 3.6 VDD + 0.3** 0.8 UNIT V V V *: -1.0 V with a pulse width of 20% tRC min (4 ns max) **: VDD + 1.0 V with a pulse width of 20% tRC min (4 ns max) 2001-12-19 2/10 TC55V8512J/FT-12,-15 DC CHARACTERISTICS (Ta = 0 to 70C, VDD = 3.3 V 0.3 V) SYMBOL IIL ILO PARAMETER Input Leakage Current VIN = 0 to VDD (Except NU pin) Output Leakage Current Input Current (NU pin) CE = VIH or WE = VIL or OE = VIH, VOUT = 0 to VDD TEST CONDITION MIN -1 -1 -1 -1 2.4 VDD - 0.2 tcycle = 12 ns TYP MAX 1 UNIT A A 1 20 1 0.4 0.2 170 140 II (NU) VIN = 0 to 0.8 V VIN = 0 to 0.2 V IOH = -2 mA IOH = -100 A IOL = 2 mA IOL = 100 A A VOH Output High Voltage V VOL Output Low Voltage CE = VIL, IOUT = 0 mA, IDDO Operating Current OE = VIH, tcycle = 15 ns tcycle = 20 ns tcycle = 25 ns mA 130 110 50 mA 4 Other Input = VIH/VIL CE = VIH, Other Input = VIH or VIL IDDS1 IDDS2 Standby Current CE = VDD - 0.2 V, Other Input = VDD - 0.2 V or 0.2 V CAPACITANCE (Ta = 25C, f = 1 .0 MHz) SYMBOL CIN CI/O Note: PARAMETER Input Capacitance Input/Output Capacitance VIN = GND VI/O = GND TEST CONDITION MAX 6 8 UNIT pF pF This parameter is periodically sampled and is not 100% tested. OPERATING MODE MODE Read Write Outputs Disable Standby * : Don't care Note: The NU pin must be left unconnected or tied to GND or a voltage level of less than 0.8 V. You must not apply a voltage of more than 0.8 V to the NU. CE OE WE H L H * Output Input I/O1 to I/O8 POWER IDDO IDDO IDDO IDDS L L L H L * H * High Impedance High Impedance 2001-12-19 3/10 TC55V8512J/FT-12,-15 AC CHARACTERISTICS (Ta = 0 to 70C READ CYCLE TC55V8512J/FT SYMBOL PARAMETER MIN tRC tACC tCO tOE tOH tCOE tOEE tCOD tODO Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Output Data Hold Time from Address Change Output Enable Time from Chip Enable Output Enable Time from Output Enable Output Disable Time from Chip Enable Output Disable Time from Output Enable 12 3 3 1 -12 MAX 12 12 6 7 7 MIN 15 4 4 1 -15 MAX 15 15 8 8 8 ns UNIT (See Note 1) , VDD = 3.3 V 0.3 V) WRITE CYCLE TC55V8512J/FT SYMBOL PARAMETER MIN tWC tWP tCW tAW tAS tWR tDS tDH tOEW tODW Write Cycle Time Write Pulse Width Chip Enable to End of Write Address Valid to End of Write Address Setup Time Write Recovery Time Data Setup Time Data Hold Time Output Enable Time from Write Enable Output Disable Time from Write Enable 12 8 10 10 0 0 7 0 1 -12 MAX 7 MIN 15 9 12 12 0 0 8 0 1 -15 MAX 8 ns UNIT AC TEST CONDITIONS PARAMETER Input Pulse Level Input Pulse Rise and Fall Time Input Timing Measurement Reference Level Output Timing Measurement Reference Level Output Load TEST CONDITION 3.0 V/ 0.0 V 2 ns 1.5 V Fig.1 3.3 V 1200 I/O pin RL = 50 VL = 1.5 V 1.5 V Fig.1 870 I/O pin Z0 = 50 CL = 30 pF CL = 5 pF (For tCOE, tOEE, tCOD, tODO, tOEW and tODW ) 2001-12-19 4/10 TC55V8512J/FT-12,-15 TIMING DIAGRAMS READ CYCLE (See Note 2) tRC Address tACC tCO CE tOH tOE OE tCOD (See Note 6) tOEE tCOE DOUT Hi-Z (See Note 6) (See Note 6) tODO (See Note 6) VALID DATA OUT INDETERMINATE Hi-Z INDETERMINATE WRITE CYCLE 1 ( WE CONTROLLED) (See Note 5) tWC tAW Address tAS WE tCW CE tWP tWR tODW DOUT (See Note 3) INDETERMINATE (See Note 6) tOEW (See Note 6) Hi-Z tDS tDH (See Note 4) INDETERMINATE DIN VALID DATA IN 2001-12-19 5/10 TC55V8512J/FT-12,-15 WRITE CYCLE 2 (CE CONTROLLED) (See Note 5) tWC tAW Address tAS WE tCW CE tWP tWR tODW (See Note 6) tCOE (See Note 6) DOUT Hi-Z INDETERMINATE tDS tDH Hi-Z DIN VALID DATA IN 2001-12-19 6/10 TC55V8512J/FT-12,-15 Note: (1) (2) (3) (4) (5) (6) Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute. WE remains HIGH for the Read Cycle. If CE goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. If CE goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance. If OE is HIGH during the write cycle, the outputs will remain at high impedance. The parameters specified below are measured using the load shown in Fig.1. (A) (B) tCOE, tOEE, tOEW tCOD, tODO, tODW Output Enable Time Output Disable Time CE , OE WE (A) 0.2 V 0.2 V INDETERMINATE (B) 0.2 V DOUT Hi-Z VALID DATA OUT INDETERMINATE Hi-Z 0.2 V 2001-12-19 7/10 TC55V8512J/FT-12,-15 PACKAGE DIMENSIONS Weight: 1.35 g (typ) 2001-12-19 8/10 TC55V8512J/FT-12,-15 PACKAGE DIMENSIONS Weight: 0.45 g (typ) 2001-12-19 9/10 TC55V8512J/FT-12,-15 RESTRICTIONS ON PRODUCT USE 000707EBA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2001-12-19 10/10 |
Price & Availability of TC55V8512J-15
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |